PART |
Description |
Maker |
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
|
IRFG110 2N7334 2N7334-QR-EB |
1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 14 LEAD DUAL IN LINE QUAD
|
SEMELAB LTD Seme LAB
|
IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
ZXMN10A07Z_04 ZXMN10A07Z ZXMN10A07ZTA ZXMN10A07Z04 |
1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 100V N-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX PLC ZETEX[Zetex Semiconductors] Diodes Incorporated
|
SKM75GB101D SKM75GAL101D SKM75GAR101D |
75 A, 1000 V, N-CHANNEL IGBT
|
SEMIKRON INTERNATIONAL
|
STP3N100XI |
1.6 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ST Microelectronics
|
SKM191 |
28 A, 1000 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SEMIKRON INTERNATIONAL
|
1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp. Micro Commercial Components Corp. MCC[Micro Commercial Components]
|
MTH6N100 |
6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
MOTOROLA INC
|
APT10026JFLL |
30 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Microsemi, Corp.
|
UN603 |
1000 mA, 80 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
PANASONIC CORP
|
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